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February 2002
FDC3512
80V N-Channel PowerTrench ? MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
? 3.0 A, 80 V
R DS(ON) = 77 m ? @ V GS = 10 V
R DS(ON) = 88 m ? @ V GS = 6 V
switching PWM controllers. It has been optimized for
low gate charge, low R DS(ON) and fast switching speed.
Applications
? DC/DC converter
? High performance trench technology for extremely
low R DS(ON)
? Low gate charge (13nC typ)
? High power and current handling capability
? Fast switching speed
D
D
S
1
6
2
5
SuperSOT -6
TM
D
D
G
3
4
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
80
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
3.0
A
– Pulsed
20
P D
Maximum Power Dissipation
(Note 1a)
1.6
W
(Note 1b)
0.8
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
.352
Device
FDC3512
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2002 Fairchild Semiconductor Corporation
FDC3512 Rev B2 (W)
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